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| ! ! ! " #$ %! & ! ! ' #$ ( ) *! + + ,$ + * ( ) ! *! + + ( - . $/0 #12$ , + *! 3!- ! !! % $45 - *0 " % ! #/, $45 - *0 " 67 8/$ ( ) ! 3!- ! !! 3 $45 - *0 9"! * # ) * 0 ' 6$ * ( ) ! *! (-! ( ( - . #$ 0 ' 88$ : ;! . ! ! 3!- ! + + 3 3 80 ( ! /$/6 + *! !! + + 0 ( ! // & ' # 450 + #$+ /#8$ 3 ' ' /2 .! ' ' % ! /<$ 1: ' % " ! /#2 !" #$% forward voltage 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0.1 1 10 D3FS6 tl=150 c [max] tl=25 c [max] pulse measurement per diode tl=150 c [typ] tl=25 c [typ] forward voltage v f [v] forward current i f [a] 10 100 1000 D3FS6 0.1 1 10 0.05 0.5 0.2 20 50 5 2 200 500 2000 5000 0.02 0.05 0.5 0.2 20 5 2 0.005 0.002 reverse voltage v r [v] junction capacitance cj [pf] f=1mhz tl=25 c typ junction capacitance reverse current 0.01 0.1 1 10 100 0 10 20 30 40 50 60 D3FS6 tl=150 c [typ] pulse measurement per diode tl=125 c [typ] tl=100 c [typ] tl=75 c [typ] reverse voltage v r [v] reverse current i r [ma] 0 2 4 6 8 10 0 10 20 30 40 50 60 70 D3FS6 0.3 reverse power dissipation tj = 150 c sin 0.2 0.5 d=0.05 dc 0.1 0.8 reverse voltage v r [v] reverse power dissipation p r [w] 0 t p v r t d=t p /t 0 t p i o t d=t p /t 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 0.5 1 1.5 2 2.5 3 D3FS6 0.3 forward power dissipation tj = 150 c sin 0.2 0.1 d=0.8 dc 0.5 0.05 average rectified forward current i o [a] forward power dissipation p f [w] 0 t p i o t d=t p /t 0 20 40 60 80 100 120 140 160 0 0.5 1 1.5 2 2.5 3 D3FS6 0.3 derating curve v r = 30v sin 0.2 0.1 d=0.8 dc 0.5 0 v r ambient temperature ta [ c] average rectified forward current i o [a] alumina substrate soldering land 2mm 2mm conductor layer 20 m substrate thickness 0.64mm 0 t p i o t d=t p /t 0 20 40 60 80 100 120 140 160 0 1 2 3 4 5 6 D3FS6 0.3 derating curve v r = 30v sin 0.2 0.1 d=0.8 dc 0.5 0.05 0 v r lead temperature tl [ c] average rectified forward current i o [a] peak surge forward capability 0 20 40 60 80 100 1 10 100 D3FS6 2 5 20 50 i fsm 10ms 10ms 1 cycle number of cycles [cycles] peak surge forward current i fsm [a] non-repetitive, sine wave, tj=25 c before surge current is applied t p i rp 0 v r 0.5i rp v rp i r p rrsm = i rp v rp 0 20 40 60 80 100 120 0 50 100 150 sbd repetitive surge reverse power derating curve junction temperature tj [ c] p rrsm derating [%] 0.1 1 10 1 10 100 sbd repetitive surge reverse power capability pulse width t p [ m s] p rrsm (t p ) / p rrsm (t p =10 m s) ratio t p i rp 0 v r 0.5i rp v rp i r p rrsm = i rp v rp |
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